IONISING RADIATION MATRIX SENSOR Russian patent published in 2015 - IPC G01T1/18 

FIELD: electricity.

SUBSTANCE: ionising radiation matrix sensor (sensing element) represents p-i-n structure manufactured by planar technology. The sensor comprises high-ohmic substrate of high-pure impurity-free silicon of n-type conductivity 1 at the front (working) face where p-areas 2, 3, layer 4 (coating) of SiO₂, aluminium metallisation 5, passivating (protective) layer 6 are placed. Occupying the major par of the surface area, p-areas 2 form sensing area of the sensor. At that number of p-areas 2 forming sensing area of the sensor is equal to 2ⁿ, where n=1-8. At least two p-areas 3 are made as circular elements (protecting rings) and placed in non-sensing area along periphery of the substrate around the sensing area formed by p-areas 2 thus ensuring reduced value of surface current and smooth drop of potential from the sensing area to the device periphery. In SiO₂ layer 4 there are windows 7 made to ensure contact of metal (aluminium metallisation) with p-area; in the passivating layer above the p-area in the substrate central part there are windows 8 made to ensure contact with p-n areas in testing process and windows 9 to connect outputs. At the substrate from the side opposite to the front face there is a layer of n-area 10 and metal 11.

EFFECT: expanding range of registered energy, reduced dimensions and weight of the sensor.

10 cl, 7 dwg