DEVICE AND METHOD OF CONTROL OF HIGH-VOLTAGE SEMICONDUCTOR SWITCHING DEVICE Russian patent published in 2020 - IPC H03K17/424 

FIELD: pulse engineering.

SUBSTANCE: device comprises transformer, primary winding of which is made in form of one open turn of wire and comprises lead (1) and lead (2), lead (1) is connected to source of transistor Q1 and drain of transistor Q2, lead (2) is connected to source of transistor Q3 and drain of transistor Q4, sources of transistors Q2 and Q4 are grounded, and secondary winding of transformer is made in the form of two turns and contains lead (3), middle lead (4) and lead (5), at that, lead (3) is connected to anode of diode D1, cathode of which is connected to drain of transistor Q5, first terminal of resistor R2 and gate of power transistor Qn, middle lead (4) is connected to first terminal of resistor R1, source of transistor Q5, second terminal of resistor R2 and source of power transistor Qn, and terminal (5) is connected to anode of diode D2, cathode of which is connected to second terminal of resistor R1 and to gate of transistor Q5.

EFFECT: possibility of generation of high-voltage pulses of arbitrary duration with short front and rear fronts, increase of maximum length of high-voltage pulse, improvement of noise immunity.

3 cl, 3 dwg