METHOD TO CONTROL OPERATION OF MEMRISTOR AND DEVICE FOR IMPLEMENTATION THEREOF Russian patent published in 2020 - IPC H01L45/00 G11C11/02 

FIELD: electricity.

SUBSTANCE: group of inventions relates to operation technology of memristor with dielectric structure located between its two electrodes, having resistive memory and providing filament switching mechanism memristor, and can be used to control stable operation of such memristor due to automatic adjustment of duration of voltage pulses, switching memristor in high-resistance or low-ohmic state. To achieve said technical result, method is proposed for controlling operation of memristor, including measurement of current resistance of memristor, comparison thereof with set resistive values of memristor in high-ohmic or low-resistance state and simultaneous with said operations supply to memristor of voltage pulse with constant amplitude sufficient for its switching, a polarity corresponding to the switching direction, and a duration determined by the action time of said pulse before the moment of at least equality of measured current resistor of memristor with preset resistance values of memristor in high-ohmic or low-ohmic state for provision of memristor switching in one of specified states at that moment. To control voltage pulses in accordance with the method described above, which are sent to the memristor for switching thereof, in automatic mode according to the invention, a device for controlling operation of the memristor is proposed, comprising two constant voltage sources with polarity opposite to each other, two switches, two resistive dividers and two comparators, which form two groups of elements for switching the memristor into a high-ohmic or low-ohmic state.

EFFECT: technical result of the proposed group of inventions is the development of an optimum method of controlling operation of the memristor, consisting in stable conversion thereof into a high-ohmic or low-ohmic state, and improved by manufacturability of stable operation of memristor of device for its switching, characterized by combination of measurement of current resistance of memristor and its comparison with preset analogue values of resistance of memristor in high-resistance or low-resistance state, simultaneous supply of voltage pulse with constant amplitude for switching memristor without dependence on stability of constant voltage source, as well as from prehistory of memristor operation and simplification of circuit implementation of device for implementation of proposed method based on reduction of resistive stochasticity of memristor during its switching.

4 cl, 1 dwg