DEVICE FOR SWITCHING MEMRISTOR Russian patent published in 2021 - IPC H01L45/00 G11C11/02 

Abstract RU 2744246 C1

FIELD: physics.

SUBSTANCE: invention relates to operation of memristor with dielectric structure located between its two electrodes, having resistive memory and providing filament switching mechanism memristor, and can be used for stable switching of such memristor due to automatic adjustment of shape and duration of voltage pulses, switching memristor in high-resistance or low-ohmic state. Disclosed is a device for switching memristor, comprising two constant voltage sources, with opposite polarity, two rheostats, two resistive dividers and two differential voltage amplifiers, which form two groups of elements for switching memristor in high-resistance or low-ohmic state. In each of said groups rheostat is connected by its input to constant voltage source, its output to first memristor electrode and control input to output of differential voltage amplifier, and resistive divider is connected by its first input to constant voltage source and second input to ground and its output with inverting input of differential amplifier. At that, to the second memristor electrode a resistor is connected, forming with the memristor, which acts as the second resistive arm, an additional resistive divider, the output of which is connected to the non-inverting inputs of both differential amplifiers in said groups, which are part of both resistive dividers in said groups of resistors with their connection to corresponding DC voltage sources have resistance equal to resistance of memristor in high-resistance or low-resistance state, and both rheostats have adjustment of their resistance values more than resistance of memristor in high-resistance state and less resistance value of memristor in low-resistance state.

EFFECT: invention provides formation of device for automatic switching of memristor, which is characterized by its stable transfer (independent of supply voltage and prehistory of memristor operation) into high-resistance or low-ohmic state.

1 cl, 2 dwg

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RU 2 744 246 C1

Authors

Safonov Aleksej Vladimirovich

Agudov Nikolaj Viktorovich

Dubkov Aleksandr Aleksandrovich

Gorshkov Oleg Nikolaevich

Belov Aleksej Ivanovich

Morozov Oleg Aleksandrovich

Shamshin Maksim Olegovich

Spanolo Bernardo

Dates

2021-03-04Published

2019-12-10Filed