SINGLE-ELECTRON MEMRISTOR (NANOCELL) AND METHOD OF USE Russian patent published in 2024 - IPC H10N70/20 B82B1/00 

FIELD: physics.

SUBSTANCE: invention can be used for supercomputers and in information communication systems. Single-electron memristor comprises on a dielectric substrate film electrodes for applying a voltage pulse therebetween – a first and a second; a cathode layer located on the surface of the first electrode, an active memristive element in the form of a quantum-size nanocrystal of a narrow-gap semiconductor. Between the electrodes there is an interelectrode nanogap with size of 5–10 nm. Cathode layer is an electron emitter into the nanogap with its subsequent injection into the nanocrystal. Switching voltage is applied as a pulse with negative polarity on the first electrode of value V and duration t, related by the formula t~(eKV/h)^-1~10^-14(KV)^-1 s, where e is electron charge; h is Planck’s constant. Normalization factor 10^-3≤K≤1 depends on the type of nanocrystal, mode of its application and is determined experimentally. Reaction time of an electron in a nanocrystal to a duration of a pulse of negative polarity lies in range of 10^-14 to 10^-11 s. Recording is carried out in the same interval of pulse durations, erasure of information – by pulses of more than 10^-11 s, reading – not less than 10^-13 s.

EFFECT: invention provides the possibility of increasing reliability, speed of switching, as well as low voltage and simplification of formation technology.

4 cl, 1 dwg