METHOD FOR OBTAINING AN ACTIVE LAYER FOR A FORMLESS ELEMENT OF A NON-VOLATILE RESISTIVE MEMORY Russian patent published in 2022 - IPC G11C13/00 H01L45/00 

FIELD: memristors manufacture.

SUBSTANCE: invention relates to the manufacture of a memristor. In the method, a dielectric layer of non-stoichiometric hafnium oxide HfO_x with composition x<2 is formed on a pre-prepared substrate, providing resistive switching. Then, in relation to the dielectric layer, local electron-beam crystallization is carried out with the formation of a filament. At the same time, an area of ​​the surface of the dielectric layer is irradiated with an electron beam in area comparable to the transverse size of the filament. The value of the electron energy in the beam is chosen from the condition of matching it with the thickness of the dielectric layer - to form a filament with its extension in the active layer from the surface bombarded by electrons to the dielectric layer located opposite the surface. The electron fluence is equal to or greater than the minimum value that provides local electron beam crystallization with the formation of a filament capable of implementing resistive switching, but not more than the fluence value that provides local electron beam crystallization with the formation of a filament that is not capable of implementing resistive switching.

EFFECT: elimination of the need for molding and a multiple reduction in the standard deviation of the switching voltages from the high-resistance state (U_SET) to the low-resistance state (U_RESET) and vice versa, as well as the resistances corresponding to the low-resistance (R_ON) and high-resistance (R_OFF) states.

5 cl, 6 dwg, 4 ex