DEVICE FOR PROGRAMMING RESISTIVE STATES OF MEMRISTOR ELEMENTS Russian patent published in 2023 - IPC H10N70/20 H03K19/00 

FIELD: electrical engineering; microelectronics.

SUBSTANCE: device contains a voltage control unit, a bipolar voltage source, two resistors, two operational amplifiers, a programmable memristor, a reference variable resistor, and a comparator. The first resistor is made at the input of the channel of the first operational amplifier. The second resistor is made at the input of the channel of the second operational amplifier. A programmable memristor is made in the feedback circuit of the first operational amplifier. Reference variable resistor is made in the feedback circuit of the second operational amplifier. In this case, the voltage control unit is connected to a bipolar voltage source. The bipolar voltage source is connected to the first resistor at the channel input of the first operational amplifier and to the second resistor at the channel input of the second operational amplifier. A comparator is installed at the output of the operational amplifier channels.

EFFECT: increased versatility of the device circuit, simplification of its circuit implementation.

1 cl, 2 dwg, 1 ex