METHOD FOR CHEMICAL INFILTRATION OR VAPOR DEPOSITION Russian patent published in 2020 - IPC C23C16/32 C23C16/44 

FIELD: chemical or physical processes.

SUBSTANCE: group of inventions relates to a method of forming silicon carbide by chemical infiltration or chemical deposition from a vapor phase and to a method of making a part from a composite material, containing matrix, at least partially formed from silicon carbide. Said silicon carbide formation method involves at least the following steps: forming silicon carbide in the pores of the porous substrate or on the surface of the substrate by placing said substrate into the reaction chamber and introducing into the reaction chamber a gas phase, from which silicon carbide is formed, said gas phase containing a reactant compound, which is silicon carbide precursor (A) and having the following formula:

,

where n is an integer equal to 0 or 1, m is an integer in range from 1 to 3, p is an integer in range from 0 to 2, wherein m+p=3, and R is -H or -CH₃. C/Si ratio between the number of carbon atoms and the number of silicon atoms in the introduced gaseous phase is in range of 2 to 3. Said method of making part from composite material includes at least the following stages: compaction of the fibrous preform of the part to be produced by the matrix phase of said silicon carbide.

EFFECT: obtaining silicon carbide of stoichiometric composition from a gas phase with high output, which enables to carry out a high degree of filling of pores of the substrate.

10 cl, 4 ex, 8 dwg