DIFFERENTIAL AMPLIFIER OF CLASS AB ON COMPLEMENTARY FIELD-EFFECT TRANSISTORS WITH CONTROL P-N JUNCTION Russian patent published in 2020 - IPC H03F3/34 

FIELD: radio engineering and communication.

SUBSTANCE: invention relates to radio engineering and communication and can be used as analogue signal amplification device, in structure of analogue microchips of various functional purpose, for example, operational amplifiers (OA), comparators, etc., including those operating at low temperatures and exposure to radiation. Differential amplifier of class AB on complementary field transistors with control p-n junction includes first (1) and second (2) inputs, which form differential input of device, first (3) input field-effect transistor, gate of which is connected to first (1) input of device, and drain is connected to first (4) current output of device, matched with first (5) power supply bus, second (6) input field-effect transistor, gate of which is connected to second (2) input of device, and drain is connected to second (7) current output of device, matched with first (5) power supply bus, third (8) input field-effect transistor, drain of which is connected to third (9) current output of device, matched with second (10) power supply bus, fourth (11) input field transistor, drain of which is connected to fourth (12) current output of device, matched with second (10) bus of power supply source, first (13) and second (14) sources of reference current. Circuit includes first (15) and second (16) matching transistors, the gate of first (15) matching transistor is connected to first (1) input of the device, its drain is connected to first (5) power supply bus, and the source is connected to second (10) power supply bus through first (13) reference current source and connected to fourth (11) input field transistor gate, gate of second (16) matching transistor is connected to second (2) input of the device, its drain is connected to first (5) power supply bus, and the source is connected to second (10) power supply bus through second (14) reference current source and is connected to the gate of third (8) input field-effect transistor, wherein gate of third (8) input field transistor is connected to source of first (3) input field transistor, and fourth (11) input field transistor source is connected to second (6) input field transistor source.

EFFECT: wider range of active operation of DA - increasing its voltage of limiting flow characteristics (U_gr) in cryogenic temperatures and exposure to penetrating radiation.

3 cl, 11 dwg