MULTIFUNCTIONAL CURRENT MIRROR ON COMPLEMENTARY FIELD-EFFECT TRANSISTORS WITH CONTROL PN-JUNCTION FOR OPERATION AT LOW TEMPERATURES Russian patent published in 2020 - IPC H03F3/45 

Abstract RU 2720557 C1

FIELD: radio equipment.

SUBSTANCE: invention relates to radio engineering and can be used as a functional assembly of analogue microcircuits (for example, differential (OA) and multi-differential operational amplifiers (MOA), comparators, etc.) for signal amplification and filtration tasks, including in the range of low temperatures and exposure to penetrating radiation. Multifunctional current mirror has field transistors, auxiliary field-effect transistors, a current-stabilizing two-terminal element, field-effect transistors with a pn-junction control (JFET).

EFFECT: technical result consists in creation of non-inverting current mirror operable in low-temperature range on complementary field-effect transistors with control pn-junction, which provides non-inverting transformations of input current signal with current transfer ratio higher than one.

5 cl, 1 dwg

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RU 2 720 557 C1

Authors

Bugakova Anna Vitalevna

Prokopenko Nikolaj Nikolaevich

Pakhomov Ilya Viktorovich

Dates

2020-05-12Published

2019-11-22Filed