MICROWAVE SWITCH Russian patent published in 2021 - IPC H01P1/15 

FIELD: radio engineering.

SUBSTANCE: invention relates to radio engineering, in particular to microwave switches. The switch contains three transmission lines with the same wave impedances, matching means. Four field-effect transistors with a Schottky barrier are additionally introduced into the microwave switch - the first, second, third, fourth, respectively, four resistors - the first, second, third, fourth, respectively, each with a resistance of at least 1 kOhm, while the first, second, third, fourth field-effect transistors with a Schottky barrier are microwave switches, the third and fourth field-effect transistors with a Schottky barrier are each made with a gate electrode width that provides a voltage standing wave ratio at the input of the disconnected switched transmission line no more than 2.0, and which are simultaneously microwave matching circuits disconnected dial-up transmission line. The drain electrodes of the first and second field-effect transistors with a Schottky barrier are connected to a common junction point, their source electrodes are connected to the drain electrodes of the third and fourth field-effect transistors with a Schottky barrier, respectively, the drain electrodes of the third and fourth field-effect transistors with a Schottky barrier are connected to each switched transmission line, respectively, their source electrodes are grounded.

EFFECT: invention is aimed at ensuring harmonization by microwave, expanding functionality.

1 cl, 6 dwg