MICROWAVE INTEGRATED CIRCUIT Russian patent published in 2015 - IPC H01L27/12 H05K1/03 

FIELD: electricity.

SUBSTANCE: microwave integrated circuit comprises a dielectric substrate made of diamond, elements of the integrated circuit - active and passive elements, transmission lines, outputs; at the reverse side of the dielectric substrate there is metallised coating, at that the elements of the integrated circuits are connected electrically and grounded as per its electrical circuit. At the face of the above dielectric substrate there is an additional layer of crystalline semi-insulating silicon with the thickness of less than 10 mcm and the elements of the integrated circuit - active and passive elements, transmission lines, outputs are made at the surface of the above layer. The elements of the integrated circuit are monolithic, in the above dielectric substrate and the layer of crystalline semi-insulating silicon there are plated-through holes and the integrated circuit is grounded by means of the above plated-through holes.

EFFECT: improved electrical performance and their improved reproducibility, improved reliability, reduced weight and dimensions, reduced labour intensity for manufacturing of the microwave integrated circuit.

6 cl, 7 dwg, 1 tbl