FIELD: chemistry.
SUBSTANCE: invention relates to the field of high-temperature electrochemistry and can be used in manufacture of solar batteries from silicon wafers made by the Czochralski method. The method includes cathodic polarisation of a silicon wafer by placing the silicon wafer in a K2WO4 – Na2WO4 – WO3 melt and supplying a cathodic potentiostatic pulse of –920 to –1020 mV relative to the platinum-oxygen reference electrode thereto.
EFFECT: modification of single-crystal silicon wafers by means of electrochemical procedures in a polytungstate melt allows increasing the specific photocurrent flowing through the wafer up to five times while maintaining the geometric dimensions thereof.
1 cl, 4 dwg, 4 ex
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