FIELD: radio electronics.
SUBSTANCE: the radiation resistance of electronic equipment products (EE) to the effects of heavy charged particles (HCP) is studied. The essence of the invention is that a sequential point scanning of a semiconductor crystal of an integrated circuit (IC) or a discrete semiconductor device (DSD) is carried out by pulsed hard photon (X-ray) radiation with a pulse duration of up to 5 ps, an electron energy of 8-12 keV and a photon energy in a pulse of up to 500 PJ, which, in terms of equivalent values of linear energy transfers (LET), simulates the effect of HCP on almost the entire spectrum of galactic cosmic rays and eliminates most of the critical shortcomings typical of the methods of modeling using ion accelerators, laser and synchrotron sources, identification of the regions most sensitive to single radiation effects (SRE), while a compact source of sharply focused hard photon (X-ray) radiation of picosecond duration on the effect of reverse Compton scattering is used as a source of pulsed photon radiation, containing a pulsed electron accelerator, a source of pulsed laser radiation, a collision chamber of electronic and laser pulses, focusing X-ray optics to create an optical focus of up to 10 microns in the plane of the instrument layer of the semiconductor crystal of the IC or DSD.
EFFECT: providing the possibility of modeling single radiation effects that occur when exposed to HCP in semiconductor IC and DPP crystals in a wide range of linear energy transfers (LET) without the use of expensive ion accelerators and synchrotron radiation sources.
1 cl, 1 dwg
