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(19)

(11)

2 578 053

(13)

(51)

IPC

G01R31/303(2006-01-01)

(21) (22)

Application

2014138221/28, 2014-09-22

(24)

Start date

2014-09-22

(22)

Actual filing date

2014-09-22

(45)

Published

2016-03-20

(72)

Inventor

Kiselev Vladimir Konstantinovich

(73)

Holder

Federalnoe Gosudarstvennoe Unitarnoe Predprijatie Federalnyj Nauchno-Proizvodstvennyj Tsentr Institut Izmeritelnykh Sistem Im. Ju.E. Sedakova"

METHOD FOR EVALUATING RESISTANCE OF DIGITAL ELECTRONIC EQUIPMENT TO IONISING RADIATION (VERSIONS) Russian patent published in 2016 - IPC G01R31/303

Abstract RU 2578053 C1

FIELD: instrument making.

SUBSTANCE: invention relates to investigation of radiation resistance of semiconductor devices (SCD) and integrated circuits, and more of integrated circuits (IC) with series and combinational processing of logic signals.

EFFECT: this invention consists in fact that by comparison and conversion of various data by resistance to dose effects with static or pulse irradiation on simulating units (SU), by resistance to effects of dose rate at pulse irradiation on SU, at resistance to effects of dose rate or during simulation, by resistance to low-intensity space radiation (SR) factors and according to specifications of dynamic parameters of SCD and IC based on general concept of generation of critical charge in volume ν_S, causing SEU and SET effects in digital electronic circuits.

27 cl, 16 dwg, 12 tbl

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RU 2 578 053 C1

Authors

Kiselev Vladimir Konstantinovich

Dates

2016-03-20—Published

2014-09-22—Filed