FIELD: electrical engineering.
SUBSTANCE: invention relates to the methods of semiconductor devices testing for resistance to the effects of cosmic space (CS) heavy charged particles with various energies. In the method of evaluating digital electronics elements resistance to the effects of failures from single CS particles, a minimum value of the particle flux corresponding to a non-zero cross-section of the faults in the region of low linear energy transfer (LET) values is determined. Obtaining the experimental dependence of the faults cross section value on the LET value, this dependence is approximated by the theoretical multiparameter distribution law, extracting this distribution parameters, determining the single particles LET threshold value corresponding to the fault cross section minimum value. In this method, seven variants of mathematical models are used. From the obtained data set, the particles flux minimum value is selected.
EFFECT: increase in the accuracy of the single-event effects (SEE) cross-sectional characteristics dependence from LET, as well as the determination of the minimum particle fluence sufficient to generate SEE effects.
1 cl, 12 dwg, 9 tbl
