FIELD: microelectronics.
SUBSTANCE: invention relates to the fields of micro- and nanoelectronics, surface physics, and can be used to produce structures with different information capacity by exposure to laser emission. The substance of the method consists in selecting a solid material; obtaining different reliefs of the material by exposure to laser emission of different intensity and different pulse duration; receiving data on the relief of the sample surface in the area exposed to laser emission; calculating the information capacity for each sample; graduating the obtained data (the value of the information capacity - the type of relief of the material surface); exposing a local area of the material structure to laser emission of the selected intensity and pulse duration, wherein said area constitutes a memory cell, to obtain a predetermined surface relief.
EFFECT: method makes it possible to obtain different information capacity in the same area of the material.
1 cl, 2 dwg
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Authors
Dates
2021-09-09—Published
2020-07-07—Filed