METHOD FOR FORMING A PERIODIC PATTERN ON THE SURFACE OF AMORPHOUS THIN FILMS OF PHASE-VARIABLE CHALCOGENIDE MATERIALS Russian patent published in 2022 - IPC H01L21/428 B82Y40/00 

FIELD: optoelectronics and to optical laser technologies.

SUBSTANCE: invention relates to the field of optoelectronics and to optical laser technologies for the formation of topological microdimensional structures on substrates. The method for forming a periodic pattern on the surface of amorphous thin films of phase-variable chalcogenide materials includes laser local irradiation of a pre-deposited film, while as a result of a single scanning with a laser beam, the formation of rewritable two-phase periodic structures occurs in a pre-ablative energy mode during periodic local crystallization of a film of phase-variable chalcogenide materials in a pulsed field. linearly polarized laser radiation of ultrashort duration with a wavelength of 1030±10 nm, moving relative to the film surface with a scanning speed of 1 to 200 μm/s, and laser irradiation is carried out by pulses with a duration of 150 fs to 2 ps, a repetition rate of 1 to 500 kHz and energy flux density from 3.0 to 3.6 mJ/cm².

EFFECT: invention provides pre-ablative formation of two-phase periodic structures based on amorphous and crystallized bands, which differ significantly in their optical contrast.

1 cl, 3 dwg, 1 ex