MULTILEVEL NONVOLATILE MEMORY CELL AND METHOD OF READING INFORMATION Russian patent published in 2025 - IPC G11B7/26 G11B7/2403 

FIELD: electronics.

SUBSTANCE: method consists in the fact that solid-state material with several metastable states of surface relief is selected; determining the number of states for storing information; determining the minimum size of the memory element and the memory cell; each different memory element is encoded by values of reflection coefficient - information capacity; each memory element is exposed to laser radiation of certain wavelength, intensity and duration of pulses; wherein information is recorded and stored by binding to surface relief parameters of solid-state material.

EFFECT: possibility of storing information on stable types of surface relief of a solid material, which provides a large number of information states without using energy sources for this purpose.

1 cl, 1 dwg