FIELD: optoelectronic instrumentation.
SUBSTANCE: invention relates to the field of optoelectronic instrumentation and concerns a radiation sensor. The radiation sensor contains a set of pixels formed in and on semiconductor substrate. Each pixel contains a microplate suspended above substrate on thermal insulation pads. The microplate contains a conductive layer, a passive optical gate containing a thermosensitive layer covering one of surfaces of the conductive layer, and a thermistor covering the surface of the thermosensitive layer opposite to the conductive layer. The conductive layer is made with the possibility of converting incident electromagnetic radiation into thermal energy. The thermosensitive layer is thermally connected to the conductive layer, and it has a reflection coefficient for the detected radiation that increases depending on its temperature.
EFFECT: increase in the resistance of the sensor, when glared by high-power radiation.
18 cl, 30 dwg
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Authors
Dates
2021-11-22—Published
2018-03-14—Filed