FIELD: optoelectronics.
SUBSTANCE: invention relates to the production of thin conductive transparent antimony-doped tin oxide films used in optoelectronics. Bis(N,N-diethyl carbamate) tin is used as a starting compound in the production of antimony-doped tin oxide films. The method for manufacturing the mentioned films includes the preparation of a solution of bis (N,N-diethyl carbamate) tin and SbCl5 in an amount of 2-10 mol. % of the amount of bis(N,N-diethyl carbamate) tin in methoxyethanol with a total concentration of 0.01-0.3 M, applying the solution to a glass substrate, drying in air at room temperature to form a film, which is then subjected to heat treatment at a temperature of 300-600°C for 2-60 min. Thin conductive antimony-doped tin oxide films with a thickness of 50-150 nm are obtained, transparent in the visible region with a specific surface resistance of 50-1000 kOhm/cm2.
EFFECT: expansion of the range of substances used for the manufacture of transparent conductive antimony-doped tin oxide films, reduction of labor intensity and energy consumption are ensured.
4 cl, 1 tbl, 9 ex
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Authors
Dates
2021-12-07—Published
2020-10-21—Filed