METHOD OF OBTAINING THIN FILMS OF TIN-INDIUM OXIDE Russian patent published in 2018 - IPC C23C18/12 

Abstract RU 2656916 C1

FIELD: optics; electricity.

SUBSTANCE: invention relates to optoelectronics and can be used in the manufacture of displays, light-emitting diodes, gates of semiconductor structures such as metal-insulator-semiconductor, gas sensors and protective coatings. Process for preparation of thin films of tin-indium oxide, comprising applying a solution containing tetra(N,N-dialkylcarbamate) tin and tris(N,N-diethylcarbamate) indium to a substrate in a ratio of 1:99 to 99:1 in an alcohol or ether solvent with a concentration of 0.1–15 %, drying in air at room temperature and subsequent heat treatment at a temperature of 250–500 °C for 5–60 minutes.

EFFECT: invention provides improvement in the optical transparency and electrical conductivity of thin films of tin-indium oxide.

3 cl, 1 tbl, 10 ex

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RU 2 656 916 C1

Authors

Levashov Andrej Sergeevich

Buryj Dmitrij Sergeevich

Latypova Aleksandra Ruslanovna

Dates

2018-06-07Published

2017-06-20Filed