FIELD: optics; electricity.
SUBSTANCE: invention relates to optoelectronics and can be used in the manufacture of displays, light-emitting diodes, gates of semiconductor structures such as metal-insulator-semiconductor, gas sensors and protective coatings. Process for preparation of thin films of tin-indium oxide, comprising applying a solution containing tetra(N,N-dialkylcarbamate) tin and tris(N,N-diethylcarbamate) indium to a substrate in a ratio of 1:99 to 99:1 in an alcohol or ether solvent with a concentration of 0.1–15 %, drying in air at room temperature and subsequent heat treatment at a temperature of 250–500 °C for 5–60 minutes.
EFFECT: invention provides improvement in the optical transparency and electrical conductivity of thin films of tin-indium oxide.
3 cl, 1 tbl, 10 ex
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Authors
Dates
2018-06-07—Published
2017-06-20—Filed