FIELD: spintronics.
SUBSTANCE: invention relates to the field of spintronics, namely, to broadband AC rectifiers made on the basis of a spin diode in the form of a heterostructure with a tunnel magnetic junction. The effect is achieved due to the fact that the specified heterostructure contains sequentially located first ferromagnetic layer with magnetization mrl, tunneling non-magnetic layer and the second ferromagnetic layer with magnetization mfl. The magnetization vectors mrl and mfl are noncollinear, but lie in the plane of the corresponding layers. In this case, the implementation of the heterostructure makes it possible to implement rectification in a nonresonant mode.
EFFECT: simplification of rectifier manufacturing.
4 cl, 4 dwg
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