METHOD OF FORMING MAGNETORESISTIVE MEMORY ELEMENT BASED ON TUNNEL JUNCTION AND STRUCTURE THEREOF Russian patent published in 2014 - IPC H01L21/8229 B82B3/00 

FIELD: physics.

SUBSTANCE: invention relates to electronic engineering and can be used to form read-only memory and as magnetic field sensors. The method of forming a magnetoresistive memory element based on a tunnel junction includes depositing on a substrate a magnetoresistive structure comprising free and linked magnetic layers, separated by a dielectric tunnel layer, followed by formation of a memory element structure; a multilayer Au/Ta structure is deposited by magnetron sputtering on the surface of the substrate to form a lower nonmagnetic conducting electrode before depositing the magnetoresistive structure, and a memory element is obtained by forming an Au/Ta/Co/TaO_x/Co/Au structure using a planar technique.

EFFECT: forming a magnetoresistive memory element consisting of two ferromagnetic films separated by a tunnel-transparent dielectric barrier with the possibility of integrating a CMOS/SOI planar technique into a large-scale IC, investigating the possibility of varying electrical resistance of a MTJ element with a sufficient level of variation of magnetoresistive resistance for industrial implementation through remagnetisation of one of the ferromagnetic layers with an external magnetic field.

20 cl, 33 dwg