FIELD: fiber-optic technology.
SUBSTANCE: invention relates to the production of gallium (II) sulfide, which is a promising material for semiconductor optoelectronic technology and infrared optics. The method for obtaining gallium (II) sulfide includes two-temperature chemical synthesis in a closed volume from elementary gallium and sulfur taken in a stoichiometric ratio. The gallium melt has a temperature of 1050-1100°C, and the sulfur melt is 300-350°C. The synthesis is carried out in a vacuum in the presence of ultraviolet radiation.
EFFECT: invention makes it possible to obtain a single-phase GaS product without the use of explosive hydrogen.
1 cl, 1 dwg, 1 ex
Title | Year | Author | Number |
---|---|---|---|
METHOD OF OBTAINING GALLIUM (II) SULFIDE | 2016 |
|
RU2623414C1 |
METHOD FOR PRODUCING EXTRA-PURE CHALCOGENIDE GLASSES CONTAINING GALLIUM | 2021 |
|
RU2770494C1 |
METHOD OF SYNTHESIZING SPINEL GaNbSe | 2020 |
|
RU2745973C1 |
METHOD OF PRODUCING ESPECIALLY PURE SULPHIDES OF P-ELEMENTS OF GROUP III | 2012 |
|
RU2513930C1 |
METHOD OF SULPHIDE COMPOUND CRYSTAL GROWTH BASED ON RARE-EARTH ELEMENT SESQUIALTERAL SULPHIDES | 2012 |
|
RU2495968C1 |
METHOD OF PRODUCING EXTREMELY PURE CHALCOGENIDE GLASS | 2018 |
|
RU2698340C1 |
METHOD FOR GROWING SILVER HALIDE SINGLE CRYSTALS BASED ON SOLID SOLUTIONS OF AgBrI - AgCl SYSTEM (VARIANTS) | 2023 |
|
RU2807428C1 |
METHOD OF SYNTHESIS OF TIN (II) HYPOTHIODIPHOSPHATE SnPS, | 1994 |
|
RU2090508C1 |
METHOD OF GROWING GALLIUM NITRIDE FILM | 2014 |
|
RU2578870C2 |
TITANIUM SULFIDE WHISKERS BASED CHEMORESISTIVE TYPE GAS SENSOR AND ITS MANUFACTURING METHOD | 2017 |
|
RU2684429C1 |
Authors
Dates
2022-03-25—Published
2021-06-09—Filed