METHOD OF OBTAINING GALLIUM (II) SULFIDE Russian patent published in 2017 - IPC C30B29/46 C30B28/00 C01G1/12 C01G15/00 

Abstract RU 2623414 C1

FIELD: chemistry.

SUBSTANCE: synthesis of GaS was carried out in a closed volume from elemental gallium and sulfur, taken in a stoichiometric ratio, under a hydrogen atmosphere at a pressure of 1300-2600 Pa, while the melt of the gallium had a temperature T(Ga)=1050-1100°C, and the sulfur melt - temperature T(S)=300-350°C.

EFFECT: complete flow of the chemical reaction to form a pure single-phase product and with the possibility of scaling the process for industrial applications.

1 tbl, 3 dwg

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Authors

Kolesnikov Nikolaj Nikolaevich

Borisenko Dmitrij Nikolaevich

Borisenko Elena Borisovna

Timonina Anna Vladimirovna

Dates

2017-06-26Published

2016-11-14Filed