METHOD OF GROWING GALLIUM NITRIDE FILM Russian patent published in 2016 - IPC C23C16/34 C23C8/24 H01L21/205 

FIELD: chemistry.

SUBSTANCE: substrate is placed in the atmosphere of a gas pumped at a rate of 5-10 l/h, the said gas being in the form of gaseous nitrogen or argon with nitrogen and hydrogen additives, wherein the substrate is heated to 600-1100°C, held at the said temperature for 1-3 hours, followed by cooling the furnace. In special cases of the invention, argon with nitrogen and hydrogen additives contains up to 15% nitrogen and up to 4% hydrogen. Before feeding the gas, the substrate is placed in a tubular alundum crucible which is placed in a quarts vessel, wherein the said gas is pumped while simultaneously heating the substrate, holding and cooling. The substrate is heated to 1050°C.

EFFECT: simple process of growing a film and short duration of the said process, obtaining oriented monocrystalline layers of different types.

4 cl, 3 dwg, 3 ex, 4 tbl