PHOTODETECTOR Russian patent published in 2022 - IPC H01L31/62 

FIELD: optoelectronic instrumentation.

SUBSTANCE: invention relates to the field of optoelectronic instrumentation and concerns a photodetector. The photodetector includes a photosensitive element and a MIS transistor connected to it. As a photosensitive element, a mirror-polished metal plate with a high reflection coefficient is used, having a narrow ledge at the bottom, the contact area of which with the gate of the MIS transistor is many times smaller than the plate area. An offset voltage is applied to the gate of the transistor, which keeps the transistor in a slightly open state.

EFFECT: increasing the protection of the photodetector from powerful laser radiation.

1 cl, 1 dwg