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2 354 007

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(51)

IPC

H01L31/18(2006-01-01)

(21) (22)

Application

2007140477/28, 2007-10-31

(24)

Start date

2007-10-31

(22)

Actual filing date

2007-10-31

(45)

Published

2009-04-27

(72)

Inventor

Valisheva Natal'Ja AleksandrovnaVitsina Natal'Ja RehmovnaLevtsova Tat'Jana AleksandrovnaKuryshev Georgij LeonidovichKovchavtsev Anatolij Petrovich

(73)

Holder

Institut Fiziki Poluprovodnikov Sibirskogo Otdelenija Rossijskoj Akademii Nauk

METHOD FOR MANUFACTURE OF MULTIPLE-UNIT PHOTORECEIVING CRYSTAL BASED ON MIS STRUCTURES Russian patent published in 2009 - IPC H01L31/18

Abstract RU 2354007 C1

FIELD: physics.

SUBSTANCE: in method for manufacture of multiple-unit photoreceiving crystal based on MIS structures, InAs substrate is coated with SiO₂ layer, in which through windows are formed lithographically to determine photosensitive area for photoreceiving crystals. Then substrate-gate insulator interface is formed on substrate in windows by means of anode oxidation. Area of window formed in SiO₂ is specified with the possibility to cover area of all photosensitive elements of photoreceiving crystal. Then layer of gate insulator SiO₂ is deposited onto layer of anode oxide with thickness of 10÷15 nm, and photosensitive elements are formed by creation of gates from ln₂O₃ on gate insulator. Conductive buses are made, which are withdrawn outside the limits of photosensitive area away from gates of photosensitive elements.

EFFECT: improved electro-optic isolation of elements due to suppression of photosensitivity in area of conductive buses.

8 cl, 4 dwg

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RU 2 354 007 C1

Authors

Valisheva Natal'Ja Aleksandrovna

Vitsina Natal'Ja Rehmovna

Levtsova Tat'Jana Aleksandrovna

Kuryshev Georgij Leonidovich

Kovchavtsev Anatolij Petrovich

Dates

2009-04-27—Published

2007-10-31—Filed