METHOD FOR ESTIMATING THE CROSS SECTIONS OF SINGLE RADIATION FAILURES IN MICROCIRCUITS OF MEMORY DEVICES UNDER THE INFLUENCE OF NEUTRON FLUXES Russian patent published in 2023 - IPC G11C11/413 

FIELD: influence of arbitrary spectrum neutron fluxes.

SUBSTANCE: invention relates to methods for estimating cross sections for radiation-induced failures in static memory chips under the influence of neutron fluxes of an arbitrary spectrum up to 14 MeV and can be used in the framework of measures to ensure the fault tolerance the equipment designed for operation under the influence of neutron fluxes with an arbitrary spectral and energy composition in the range up to 14 MeV by means of a computational and experimental assessment based on the recalculation of experimental fault cross sections obtained using available neutron sources to the fault cross section under predicted conditions during operation. For each exposure to neutron fluxes, the implementation of the secondary particle model is determined using the Monte Carlo simulator, it is used to determine the spectra of linear energy losses of secondary charged particles, to obtain which the model of the microcircuit is set in the form of several flat homogeneous layers of silicon or silicon oxide, the thickness of which is close to the thickness of the topological layers of the microcircuit.

EFFECT: determining the threshold value of the failure by linear energy losses, which is a parameter of the microcircuit fault tolerance model, and determining the cross section of microcircuit failures in predicted conditions.

1 cl, 3 tab, 8 dwg