TRIGGER FOR COMPLEMENTARY MICROCIRCUIT OF METAL-OXIDE-SEMICONDUCTOR STRUCTURE Russian patent published in 2015 - IPC H03K19/07 H03K19/17 H03K3/286 

Abstract RU 2541894 C1

FIELD: electricity.

SUBSTANCE: trigger consists of pairs of interconnected NMOS and PMOS transistors with power supply bus, control and output lines; the transistors are jointed in two blocks, each of them containing two groups of two NMOS and two PMOS transistors, at that two blocks of transistors are placed at integrated circuit crystal at distance from each other, which is equal to threshold value or bigger than this value in order to exclude simultaneous impact of single nuclear particle on both blocks of transistors at the level more than the threshold value.

EFFECT: improving stability to impact of single nuclear particles without excess increase in square area occupied by the trigger at crystal included into composition of integral CMOS microcircuit.

1 tbl, 2 dwg

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RU 2 541 894 C1

Authors

Stenin Vladimir Jakovlevich

Katunin Jurij Vjacheslavovich

Dates

2015-02-20Published

2013-09-26Filed