PULSED TERAHERTZ SPECTROMETER WITH A SEMICONDUCTOR OSCILLATOR BASED ON THE EFFECT OF SURFACE FIELD MODULATION Russian patent published in 2023 - IPC G01J3/10 

FIELD: spectroscopic measurements.

SUBSTANCE: invention relates to the field of spectroscopic measurements and concerns a pulsed terahertz spectrometer with a semiconductor generator based on the effect of surface field modulation. The spectrometer contains a pulsed laser, a beam-splitting element, a generation unit, an optical delay line unit, a terahertz radiation transport system, and a recording unit. The pulsed laser is optically coupled to a beam-splitting element that separates the laser radiation beam into two beams with one beam supplied to the generation unit and the second beam to the optical delay line unit. The generation unit is optically connected to the terahertz radiation transport system. The registration unit is optically connected to the controlled unit of the optical delay line and the terahertz radiation transport system. The generation block is made in the form of a metal-dielectric-semiconductor structure, which makes it possible to modulate the strength of the near-surface field. In addition, the registration unit is configured to register the strength of the terahertz electromagnetic field.

EFFECT: increasing the signal-to-noise ratio, providing the possibility of generating terahertz radiation in a wide range of laser radiation wavelengths and expanding the spectral range of terahertz radiation to the high-frequency region of the spectrum.

5 cl, 2 dwg