METHOD FOR PRODUCING A SINGLE CRYSTAL OF TITANIUM MONOXIDE Russian patent published in 2021 - IPC C01G23/04 C30B13/06 C30B13/24 C30B29/16 

FIELD: microelectronics.

SUBSTANCE: invention relates to the field of microelectronics and can be used in the manufacture of electrically conductive layers in microelectronic layered structures. First, a mixture of polycrystalline titanium dioxide powder and titanium taken in the mass ratio (59-60):(40-41) is prepared accordingly. The resulting mixture is sintered at 1480-1520°C in a vacuum of 10^-3 Pa for 24 hours, pressed and a blank is formed. Then, selective melting of the surface of the workpiece and the seed from a single crystal of titanium monoxide is carried out using two bielliptic mirrors installed in a vertical configuration and a 5 kW xenon lamp as a radiation source located at the focal point of the lower mirror, under conditions of crucibleless zone melting in an argon atmosphere with a purity of 99.998 at its constant pressure of 7-9 bar. The melt zone is located at the focal point of the upper mirror. The density of the luminous flux falling on the melt zone is regulated by mechanical or automatic movement of stainless steel shutters. The speed of movement of the lower rod with the workpiece in the vertical direction is 2-5 mm/h, the speed of movement of the upper rod with a single-crystal titanium monoxide seed is 5-9 mm/h, the rotation speed of the upper rod is 2-4 rpm.

EFFECT: resulting single crystal of titanium monoxide has a stoichiometric composition of TiO_1.00, a stable disordered cubic structure, contains only one phase, has minimal defects and retains its properties under high-temperature influences.

1 cl, 3 dwg, 2 ex