TECHNIQUE OF FURNACE FEED ADDITIONAL CHARGING DURING PROCESS OF SILICON SINGLE CRYSTAL GROWING BY CZOCHRALSKI METHOD Russian patent published in 2009 - IPC C30B15/02 C30B29/06 

FIELD: metallurgy.

SUBSTANCE: invention concerns technique of receiving single crystal field by means of method of growth from melt. Method of furnace feed additional charging at growing of silicon single crystals by means of Czochralski method includes charge feeding on the melt surface in capsule from container with charged furnace feeding, where it is provided ability of charge feeding dose on the melt surface through the bottom end, dumping of container till the melt surface in capsule, melt temperature pulldown till formation on the surface of viscous layer of melt, interfere with feeding of unfused charge into melt volume, after what container is opened and charge portion is poured onto viscous layer surface. Then melt temperature is gradually applied till total melting of charged furnace feed, after what empty (or partially discharged) container is taken out from the growth region, to its place it is dropped rod with seed single crystal, it is implemented ingot dummy bar and implemented another silicon single crystals growth process.

EFFECT: higher parameters repeatability of grown ingots, and also reducing of growing of single crystals production cycle duration and energy saving at the expense of technological cycle optimisation.

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