ELECTROLUMINISCENT DEVICE EMITTING IN THE INFRARED SPECTRAL RANGE IN AN INTEGRATED DESIGN WITH A SILICON SUBSTRATE Russian patent published in 2023 - IPC H05B33/00 H05B33/12 H05B33/10 

FIELD: lighting device.

SUBSTANCE: invention is related to an electroluminescent light source emitting in the infrared range. An electroluminescent device emitting in the infrared spectral range in an integrated design with a silicon substrate contains a silicon substrate, a light-emitting layer rigidly connected to the substrate in form of a layer of conducting oxide In₂O₃ doped with an impurity of Er, a means for applying an electric potential in relation to the substrate and the light emitting layer rigidly connected to it. The light emitting layer is made by magnetron sputtering and deposition of the target with a given composition of the material of the light-emitting layer. The light emitting layer has deep defect states in the band gap, characterized by a density of states. This provides a conduction channel in the band gap for holes and a lowering of the energy barrier for hole injection with the possibility of bipolar injection and transport of charge carriers, formation of electron-hole pairs with a recombination energy corresponding to the resonant excitation of erbium atoms into a given excited state to obtain radiation with the required length waves.

EFFECT: mechanism of electrical pumping through the recombination of electron-hole pairs and resonant excitation of the required excited state of erbium atoms to obtain electroluminescence in the wavelength range from 1.50 to 1.56 mc, characterized by higher efficiency.

6 cl, 5 dwg