FIELD: electricity.
SUBSTANCE: semiconductor light-emitting instrument based on silicon dioxide includes substrate, upper and lower electrodes and layers formed during magnetron sputtering generating semiconductive heterostructure with p-n junction. Layer of active area with p-n junction is made from porous silicon dioxide (SiO2 M). Width of prohibited zone of layer of active area with p-n junction >4 eV.
EFFECT: providing possibility to reach light radiation in UV band of radiation spectrum, high brightness, simplifying the design and manufacturing procedure of semiconductor light-emitting instrument.
1 dwg, 1 ex
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