SEMICONDUCTOR LIGHT-EMITTING DEVICE Russian patent published in 2010 - IPC H01L33/04 

FIELD: physics.

SUBSTANCE: according to the invention, the device has a substrate, active p- and n-type conduction layers between which there is a rare-earth element-doped emitting zone, including at least two emitting zones separated by extra p- and n-type conduction layers. The active layers and each of the extra layers are heavily doped. The device can be easily integrated into specific opto- and microelectronic circuits, including silicon-based circuits.

EFFECT: high output power of the light-emitting device based on semiconductor materials, doped with impurities of rare-earth elements, with provision for high stability of output parametres at room temperature owing to formation of an inbuilt electric field in the working area of the device with new distribution configuration along the semiconductor structure.

7 cl, 4 dwg