SUBSTRATE AND SEMICONDUCTOR STRUCTURE WITH SUBSTRATE Russian patent published in 2023 - IPC H01L23/498 

FIELD: semiconductor technology.

SUBSTANCE: present invention relates to a substrate and a semiconductor structure with a substrate. The substrate comprises a housing and a conductive layer, and the housing has an open area; wherein the conductive layer is located in the open area and includes a first conductive bridge and a second conductive bridge, which are spaced apart; at the same time, the first through hole is located on the first conductive bridge.

EFFECT: location of the first conductive bridge and the second conductive bridge with an appropriate gap in the open area improves the quality of signal transmission of the conductive layer, as well as increase the ability of the housing to resist deformation by controlling the width of the first conductive bridge and the second conductive bridge, and the presence of the first through hole on the first conductive bridge allows to reduce the total area of the conductive layer, thereby reducing the problem of buckling of the package and structurally improving the performance of the substrate.

14 cl, 8 dwg