MULTIBEAM KLYSTRON Russian patent published in 2023 - IPC H01J23/18 

FIELD: vacuum microwave devices.

SUBSTANCE: in a multibeam klystron, the resonators are made with additional inductive elements that are located inside the interaction gap, whereas the following relation is fulfilled:

0.5<LC(2Пf_p)2<2.0, (1)

where L is the total inductance of the elements; C is the total capacitance of the interaction gap; f_p is the operating frequency of the klystron. The inductive elements can be made in the form of straight jumpers, or in the form of a ring with jumpers connecting the ring with the edges of the interaction area or in the form of single and multi-start spirals covering the areas of each of the channels.

EFFECT: increased output power of the multibeam klystron, increased efficiency, an improvement in the weight and size characteristics of the device due to the use of the design of the multibeam klystron with the most uniform distribution of the electric field in the interaction region.

4 cl, 9 dwg