METHOD FOR MANUFACTURING HIGHLY CRYSTALLINE INORGANIC PEROVSKITE THIN FILMS CsPbBr Russian patent published in 2023 - IPC C30B28/04 C30B29/12 

FIELD: synthesis of inorganic materials.

SUBSTANCE: invention relates to the production of highly crystalline thin films of CsPbBr₃ perovskite with a high optical gain, which can be used in optoelectronics. A method for manufacturing inorganic perovskite films CsPbBr₃ includes preparing a solution of perovskite precursors - caesium bromide and lead bromide in a ratio of 1:1.6 in dimethyl sulfoxide, centrifuging the solution onto two glass substrates, followed by annealing with an increase in temperature by 5°C every 1.5 minutes up to 130°C. Then the resulting substrates are combined with the films with the film side and clamped in a horizontal position with heating up to 510°C for 10 minutes and refrigeration for 3 hours. As a result, a highly crystalline thin film of CsPbBr₃ perovskite is formed without breaks, with a roughness of not more than 5 nm, an average grain size of not less than 10 mcm, and a thickness within 100 nm.

EFFECT: high crystallinity of obtained thin films of perovskite CsPbBr₃ and increase in uniform sections of the film.

1 cl, 2 dwg, 1 ex