LASER RADIATION PHOTO DETECTOR Russian patent published in 2023 - IPC H01L31/101 

FIELD: semiconductor optoelectronics.

SUBSTANCE: semiconductor photoelectric converters based on heterostructures. The laser radiation photodetector includes a front wide-gap layer of n-type conductivity with a band gap Eg₁ of higher energy quanta of converted radiation, a narrow-gap photoactive layer of the same type of conductivity with Eg₂ of lower energy quanta of converted radiation, and rear wide-gap barrier layers with p-type conductivity. The total thickness of the barrier layers is set to be greater than the thickness W of the space charge region of the p-n junction. The barrier is made of three wide-gap layers, the first two of which are made with a smooth increase in Eg from the narrow-gap layer. The gradient dEg/dx of the first gradient layer adjacent to the narrow-gap layer is made in the range dEg/dx = (3-10)⋅Eg₂/W and 2-4 times higher than the gradient of the second gradient layer. The third layer is made with a constant value of Eg₃ equal to the maximum value of Eg₂ in the second gradient layer and set in the range Eg₃=(1.3-1.5)Eg₂. The doping of the layers of the rear wide-gap barrier is set to 2-4 times less than the doping of the narrow-gap layer.

EFFECT: increased operating voltage and efficiency of the photodetector.

6 cl, 3 dwg