PHOTOELECTRIC CONVERTER Russian patent published in 2023 - IPC H01L31/101 

FIELD: semiconductor optoelectronics.

SUBSTANCE: photoelectric converter includes a front wide-gap layer (1), a narrow-gap photoactive layer with a p-n junction (2), a rear wide-gap layer (3), on the back surface of which a dielectric perforated mirror coating (5) is made. The dielectric perforated mirror coating is made with a distance between round holes 10-20 times greater than the diameter of the holes filled with layers of ohmic contacts (6) to the rear wide-gap layer (3) with the thickness of the contact layers set equal to the thickness of the dielectric mirror coating (5), at the surface of which a metal mirror (8) is applied.

EFFECT: increased external photoresponse quantum yield, increased operating voltage and increased efficiency.

6 cl, 2 ex, 1 dwg