PHOTOELECTRIC CONVERTER Russian patent published in 2016 - IPC H01L31/04 

FIELD: electronic equipment.

SUBSTANCE: invention relates to electronic engineering and specifically to photoelectric converters of solar energy. Photoelectric converter based on graded-gap isotype heterostructure of semiconductor compounds A3B5 and/or A2B6 comprises a semiconductor substrate and substrate isotype photoactive layer, antireflection layer and ohmic contacts. Band gap in photoactive layer decreases in direction from illuminated surface to substrate by changing composition of photoactive layer of material, resulting in a change of band gap gradient from 0.8 eV/m to 1.2 eV/mm, which provides a pulling gradient of electric field in photoactive layer in range of 0.8-1.2 V/m.

EFFECT: photoelectric converter according to invention has high efficiency.

4 cl, 2 dwg