TERAHERTZ NEAR FIELD IMAGING DEVICE Russian patent published in 2023 - IPC G01J1/08 G01J1/44 H01L27/146 

FIELD: imaging.

SUBSTANCE: invention concerns a sensor for an imaging device for the near field in the terahertz range. The sensor contains the first flat substrate made of a semiconductor material, with an active surface, on which an array of transmitters of terahertz radiation is created using semiconductor technology, and a second flat substrate located at a distance from the first substrate, made of a semiconductor material, having an active surface, on which an array of receivers of terahertz radiation is created using semiconductor technology. Each receiver is located in the near field of the corresponding transmitter of the first substrate. The step in the arrays is at least half the radiation wavelength inside said substrates, and each substrate has a thickness equal to at most half the radiation wavelength inside the substrate.

EFFECT: increasing sensitivity and resolution of the sensor.

8 cl, 3 dwg