METHOD OF ZINC ALLOYING SUBSTRATES OR LAYERS OF INDIUM PHOSPHIDE Russian patent published in 2019 - IPC H01L21/223 

FIELD: instrument engineering.

SUBSTANCE: invention can be used for making semiconductor devices using zinc alloyed zinc alloy substrates or layers. Substance of the invention consists in the fact that the zinc doping method of substrates or layers of indium phosphide involves use as a source of dopant Zn of a solid-state source based on a zinc-containing compound, bringing source of dopant Zn into mechanical contact with substrate or layer of indium phosphide to be alloyed, followed by heating and diffusion of Zn as a result of heating into substrate or layer of indium phosphide with achievement of required degree of doping, wherein Zn source of dopant is used as a solid source based on zinc-containing compound in form of film of compound Zn₃P₂ or monolithic plate Zn₃P₂, in order to effect doping, the source of dopant Zn is conjugated by a film Zn₃P₂ or monolithic plate Zn₃P₂ with indium phosphine substrate or film, thus creating narrow gap with value determined by height of natural irregularities and deviation from flatness of contacting surfaces – between working surface of film Zn₃P₂ or monolithic plate Zn₃P₂ and a doped indium phosphine substrate or film, in which heating results in thermal dissociative sublimation of compound Zn₃P₂ with formation of phosphorus and zinc vapor, interaction of dissociation products Zn₃P₂ with a substrate or a film of indium phosphide, which leads to saturation of near-surface layers of indium phosphide with dopant atoms and to subsequent diffusion of dopant into the volume of indium phosphide, and also leading to compensation for thermo-chemical erosion of the surface of indium phosphide by reacting the surface of indium phosphide with phosphorus vapor.

EFFECT: possibility of uniform distribution of profile, depth and level of alloying on area of crystal, as well as achievement of controllability and reproducibility of alloying, shorter duration of process.

5 cl, 3 dwg