GALLIUM ARSENIDE OPERATIONAL AMPLIFIER Russian patent published in 2024 - IPC H03F3/45 

FIELD: microelectronics.

SUBSTANCE: gallium arsenide operational amplifier is proposed, in which the first (4) and second (5) transistors of the input differential stage (3) are made in the form of gallium arsenide pnp transistors, the current mirror (16) is implemented on the first (18) and second ( 19) gallium arsenide bipolar transistors, the emitters of which are connected to the non-inverting current output (17) of the current mirror (16), the base of the first (18) gallium arsenide bipolar transistor is connected to the base of the second (19) gallium arsenide bipolar transistor and connected to the collector the first (18) gallium arsenide bipolar transistor, which is the input of the current mirror (16), the output of the current mirror (16) is connected to the base of the first (20) output bipolar transistor.

EFFECT: creating a gallium arsenide operational amplifier based on pnp bipolar and nJFet field-effect transistors, operating at the output in class AB mode with relatively low-resistance load resistances.

2 cl, 7 dwg