METHOD OF VACUUM ENCAPSULATION OF BOWLS IN HIGH-PRESSURE CELLS FOR SYNTHESIS OF DIAMOND POLYCRYSTALLINE PLATES (VERSIONS) Russian patent published in 2024 - IPC B01J3/06 C30B29/04 F16J15/08 

Abstract RU 2817022 C1

FIELD: various technological processes.

SUBSTANCE: invention can be used in making polycrystalline diamond composites in high-pressure cells. Vacuum encapsulation of bowls is carried out by thermal annealing in a working chamber of a high-vacuum high-temperature furnace. Prior to thermal annealing, prefabricated bowls are assembled from refractory metals: filling, middle and external. Using physical deposition from gas phase or electrochemical methods on the outer surface of the middle bowl and the inner surface of the external bowl, an activation layer of metal with thickness of not more than 5 mcm is applied with a wetting angle of less than 20° to solder material having melting point of 800–1100 °C and wetting angle of not less than 60° to bowls material. Diamond mixture with a substrate is placed in the filling bowl. Middle bowl is put on the filling bowl from below. According to the first version, a solder is made in the form of a tape, the length of which is equal to the circumference of the outer wall of the middle bowl, width is 1–4 mm, and thickness is 10–100 mcm, and it is placed between filling bowl and external bowl, which is put on top. According to the second version, the solder is made in the form of a disk, the diameter of which is equal to the outer diameter of the middle bowl, and thickness is 50–150 mcm, and it is placed inside the external bowl, which is put on the middle bowl. Elements assembled in both versions are placed in a working chamber of a high-vacuum high-temperature furnace, which is evacuated, heated to degassing temperature of the diamond mixture and held at this temperature. After that, solder is heated to liquidus temperature and held at this temperature.

EFFECT: high tightness and quality of the soldered seam, as well as protection of the diamond mixture and substrate from contamination with solder material.

4 cl, 2 dwg

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RU 2 817 022 C1

Authors

Gadiev Radik Mansafovich

Nabiullin Ilsur Rashitovich

Sharipov Artur Nailevich

Ishbaev Gniiatulla Garifullovich

Dates

2024-04-09Published

2023-08-09Filed