FIELD: chemical or physical processes.
SUBSTANCE: invention relates to production of electronic hydrogen bromide used in microelectronics. To obtain hydrogen bromide with its subsequent purification, bromine is preheated with further complete gasification and mixed with hydrogen. Bromine is fed into the reactor for catalytic combustion to obtain hydrogen bromide; the reaction product is extracted from the upper part of the reactor. Catalytic combustion reaction is carried out on a catalyst in a reactor. Catalyst is a silicon-containing support with a composition containing platinum, iridium and rhodium deposited on it by liquid-phase impregnation. Silicate with open pores is used as silicon-containing carrier. Platinum, iridium, rhodium are in the form of nanoparticles placed in the pores on the outer surface of the carrier in amounts 0.7–1.0%, 0.5–1%, 0.1–0.3%, accordingly, on weight of catalyst. Reaction product—hydrogen bromide is fed into a refrigerator connected to a cryostat, with a cooling temperature from −40 to −50 °C, and then into a purification system consisting of at least three cryoadsorption columns. First and second columns are filled with molecular sieves of class 5A, and the third and subsequent columns are filled with fluoroplastic chips. Temperature of columns is from −60 to −65 °C. Purified hydrogen bromide is condensed in a vessel with a jacket made of quartz glass and cooled with liquid nitrogen. Hydrogen bromide collection vessel is pre-evacuated and then the product is collected at a temperature not higher than −65 °C. Reactor is used at temperature of 320–400 °C. Residence time of the reaction mixture in the catalyst layer should not exceed 1 s. Also disclosed is a catalyst for implementing a method of producing hydrogen bromide.
EFFECT: invention increases purity and yield of hydrogen bromide.
2 cl, 1 dwg, 6 ex
