REACTION CELL OF HIGH-PRESSURE GANG-DIE APPARATUS FOR GROWTH OF ASYMMETRICALLY ZONAL DIAMOND SINGLE CRYSTALS Russian patent published in 2001 - IPC

FIELD: growth of diamond single crystals on gang-die apparatuses of "BARS" type for manufacture of various types of single-crystal diamond tools. SUBSTANCE: reaction cell has coaxial installed cylindrical heating element with current lead-in covers and rods of various thicknesses. Diameter of upper rod is smaller than that of lower rod by 20-25%. Reaction cell also has tablets closing the cell and insulating bushing whose cavity, its hottest zone, accommodates carbon source and metal solvent. Carbon source is made in the form of ring whose inner diameter equals 1/2-1/3 of outer diameter. Located in cold zone of insulating bushing is substrate on which diamond crystal is positioned with displacement for 1/3-2/3 of substrate diameter from its center. Insulating internal bushing is made of mixture of zirconium and magnesium and cesium chloride with the following ratio of components, wt. %: ZrO₂, 60-70; MgO, 10-15; CsCl, 15-30. EFFECT: production of asymmetrically zonal diamond crystals of more than one carat weight and with one localized defective end. 4 cl, 2 dwg, 2 ex