MATRIX PHOTODETECTOR Russian patent published in 2025 - IPC G01J1/02 

Abstract RU 2834191 C1

FIELD: electricity.

SUBSTANCE: invention relates to semiconductor photodetectors and concerns a matrix photodetector. Array photodetector comprises functionally connected array of photoresist sensors placed on a substrate with controlled contacts, set of buses, which includes an electric current supply bus connected to a grounded direct current source and an output potential bus connected to the measurement and processing means, multiplexer, providing connection of controlled contacts to different buses, and a control controller that sets the sequence of connecting the controlled contacts to different buses. Photoresist sensors in the matrix are electrically connected to each other to form a structure of irreducible blocks. Set of buses additionally contains an earthing bus connected to the measuring and processing means. Controlled contacts are equipped with peripheral connections of photoresist sensors with observance of condition: , where s is the number of photoresist sensors in the matrix, c is the number of peripheral connections of photoresist sensors equipped with controlled contacts.

EFFECT: high manufacturability of the design due to implementation of a completely planar matrix photodetector.

6 cl, 11 dwg

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RU 2 834 191 C1

Authors

Semkin Valentin Andreevich

Kapralov Kirill Nikolaevich

Svintsov Dmitrij Aleksandrovich

Bocharov Aleksej Yurevich

Kashchenko Mikhail Alekseevich

Domaratskij Ivan Konstantinovich

Kajdashev Vladimir Evgenevich

Morozov Aleksandr Dmitrievich

Mazurenko Ilya Mikhajlovich

Myltsev Vladislav Nikolaevich

Kononenko Oleg Viktorovich

Dates

2025-02-04Published

2024-07-09Filed